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| CM75TU-34KA Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMODTM KA-Series Module 75 Amperes/1700 Volts S - NUTS (5 TYP) K CM J K R T - (4 TYP.) TC Measuring Point N P P GVP EVP GWP EWP GUP EUP TC Measuring Point L BE N L N L M Q GUN EUN U GVN EVN V W GWN EWN R J L N D A W - THICK x X - WIDE TAB (12 PLACES) J L N L V H C F G Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM75TU-34KA is a 1700V (VCES), 75 Ampere SixIGBT IGBTMODTM Power Module. Type CM Current Rating Amperes 75 VCES Volts (x 50) 34 P GUP EUP U GUN EUN N GVP EVP V GVN EVN GWP EWP W GWN EWN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 4.21 4.02 Millimeters 107.0 102.0 Dimensions M N P Q R S T V W X Inches 0.57 0.85 0.67 1.91 0.15 M5 0.26 Dia. 0.03 0.02 0.110 Millimeters 14.4 21.7 17.0 48.5 3.75 M5 6.5 Dia. 0.8 0.5 2.79 1.14 +0.04/-0.02 29.0 +1.0/-0.5 3.540.01 3.150.01 0.16 1.02 0.31 0.91 0.47 0.43 90.00.25 80.00.25 4.0 26.0 8.1 23.0 12.0 11.0 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TU-34KA Six IGBTMODTM KA-Series Module 75 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C) Mounting Torque, M5 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM75TU-34KA -40 to 150 -40 to 125 1700 20 75 150* 75 150* 660 31 31 680 3500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V, Tj = 25C IC = 75A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage* VCC = 1000V, IC = 75A, VGE = 15V IE = 75A, VGE = 0V, Tj = 25C IE = 75A, VGE = 0V, Tj = 125C Min. - - 4.0 - - - - - Typ. - - 5.5 3.2 3.8 340 - 2.2 Max. 1 0.5 7.0 4.0 - - 4.6 - Units mA A Volts Volts Volts nC Volts Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 1000V, IC = 75A, VGE1 = VGE2 = 15V, RG = 4.2 , Resistive Inductive Load Switching Operation IE = 75A VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 5.3 Max. 10.5 1.8 0.55 100 100 400 800 200 - Units nf nf nf ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge 2 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TU-34KA Six IGBTMODTM KA-Series Module 75 Amperes/1700 Volts Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Rth(j-c')Q Test Conditions Per IGBT 1/6 Module Per FWDi 1/6 Module Per Module, Thermal Grease Applied Tc Measured Point (Under Chips - IGBT Part) * If you use this value, Rth(f-a) should be measured just under the chips. Min. - - - - Typ. - - 0.09 - Max. 0.19 0.35 - 0.13* Units C/W C/W C/W C/W OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 150 COLLECTOR CURRENT, IC, (AMPERES) 125 100 75 15 11 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC 14 12 150 120 VCE = 10V Tj = 25C Tj = 125C 6 5 4 3 2 1 0 0 4 8 12 16 20 0 25 50 75 100 125 150 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) VGE = 20V 10 VGE = 15V Tj = 25C Tj = 125C 90 9 50 25 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 60 30 0 8 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 102 8 6 4 2 101 Cies IC = 150A IC = 75A 102 100 Coes VGE = 0V Cres IC = 30A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 1 2 3 4 5 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TU-34KA Six IGBTMODTM KA-Series Module 75 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC = 1000V VGE = 15V RG = 4.2 Tj = 25C INDUCTIVE LOAD REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 104 REVERSE RECOVERY TIME, trr, (ns) 103 VCC = 1000V VGE = 15V tf RG = 4.2 Tj = 125C td(off) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 75A SWITCHING TIME, (ns) 103 16 12 8 4 VCC = 800V VCC = 1000V 102 td(on) 102 trr Irr 101 101 tr 100 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 0 0 100 200 300 400 500 GATE CHARGE, QG, (nC) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.19C/W 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.35C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4 |
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